| PART |
Description |
Maker |
| SPP80N06S2-09 SPB80N06S2-09 |
Low Voltage MOSFETs - TO220/263; 80 A; 55 V; NL; 9.1 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N08S2L-07 SPB80N08S2L-07 |
Low Voltage MOSFETs - TO220/263; 80 A; 75V; LL; 7,1 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N06S2L-H5 SPB80N06S2L-H5 |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 5 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPI06N03LA IPP06N03LA |
OptiMOS®2 - Power packages
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 6.2mOhm, 50A, LL
|
Infineon
|
| PPN0500B 542AB0500 915AB0500MBP |
HEATSINK TO220/218 5.0C/W
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
HEATSINK TO220/218 5.8C/W 散热片TO220/218 5.8摄氏
|
KEMET Corporation
|
| 2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE
NPN Epitaxial Base Transistor（TO220 Metal PackageNPN外延晶体管（TO220 金属封装，高可靠性）)
DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUZ32 BUZ32SMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 9.5A, NL
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.4 Ohm, 9.5A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.3mOhm, 100A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.0mOhm, 100A, NL
|
INFINEON[Infineon Technologies AG]
|
| KMB2D0N60SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
