PART |
Description |
Maker |
SPP77N06S2-12 SPB77N06S2-12 |
OptiMOS Power-Transistor Low Voltage MOSFETs - TO220/263; 77 A; 55V; NL; 12 mOhm
|
Infineon Technologies A... Infineon Technologies AG
|
SPP80N06S2L-11 SPB80N06S2L-11 |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 11 mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPP80N06S2L-H5 SPB80N06S2L-H5 |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 5 mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPB100N08S2-07 SPP100N08S2-07 |
Low Voltage MOSFETs - TO220/263; 100 A; 75V; NL; 7.1 mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4 |
OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - TO220/262/263; 80A; 40V; NL; 4mOhm
|
INFINEON[Infineon Technologies AG]
|
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE NPN Epitaxial Base Transistor(TO220 Metal PackageNPN外延晶体管(TO220 金属封装,高可靠性)) DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL
|
SEME-LAB[Seme LAB] TT electronics Semelab Limited
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
SPP47N10 SPB47N10 SPI47N10 |
SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL OptiMOS Power-Transistor 的OptiMOS功率晶体 80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
|
INFINEON[Infineon Technologies AG]
|