| PART |
Description |
Maker |
| SD824 |
High Speed N-Channel Lateral DMOS JFET Switch
|
Linear Systems
|
| MRF9030MR1 MRF9030MBR1 |
945 MHz, 30 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF6S21100HR3 MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
Freescale Semiconductor, Inc
|
| MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
| AFT05MS004N AFT05MS004NT1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| AFT05MP075GNR1 AFT05MP075NR1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
|
NXP Semiconductors
|
| AFT09MS015N AFT09MS015NT1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| AFT05MS003N |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| TPC8006-H |
Field Effect Transistor Silicon N Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Portable Equipment Applications Notebook PC Applications
|
TOSHIBA
|
| LTC2444 LTC2444CUHF LTC2449CUHF LTC2449IUHF LTC244 |
24-Bit High Speed 8-/16-Channel Delta Sigma ADCs with Selectable Speed/Resolution
24-Bit High Speed 8-/16-Channel ADCs with Selectable Speed/Resolution
|
LINER[Linear Technology]
http://
|
