| PART |
Description |
Maker |
| IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFIBC40G IRFIBC40 IRFIBC40GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=3.5A)
|
IRF[International Rectifier]
|
| IRF5801 |
Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rdson）最大值\u003d 2.2ohm，身份证\u003d 0.6A的）
Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFY9140CM |
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.2ohm, Id=-15.8A)
POWER MOSFET P-CHANNEL(BVdss=-100V Rds(on)=0.2ohm Id=-15.8A)
|
IRF[International Rectifier]
|
| STP4NC50 STP4NC50FP |
N-CHANNEL MOSFET
INTEGRATED EC000 MPU
N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| IRFD9110 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A)
Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-0.70A)
|
IRF[International Rectifier]
|
| HGTP20N60A4 HGTG20N60A4 FN4781 |
600V/ SMPS Series N-Channel IGBTs
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBTs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FQI10N60C FQB10N60C FQB10N60CTM FQI10N60CTU |
600V N-Channel MOSFET
600V N-Channel Advance Q-FET C-Series
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| FQP2N60C FQPF2N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQT1N60C FQT1N60CTF-WS |
N-Channel QFETMOSFET 600V, 0.2A, 11.5
N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm
|
Fairchild Semiconductor
|
