| PART |
Description |
Maker |
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| AOTF11N60 AOT11N60 |
600V,11A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| AOW11N60 |
600V,11A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| AOI11S60 |
600V 11A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| AOT11S60 |
600V 11A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| RJK6013DPP-E0 RJK6013DPP-E0-15 |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| AWL6950RM21P0 AWL6950RM21P6 AWL6950RM21P8 EVA6950R |
2.4/5 GHz 802.11a/b/g WLAN Power Amplifier 2.4 / 5 GHz02.11a/b/g无线功率放大
|
ANADIGICS, Inc.
|
| RFSP5032RS32Q1 RFSP5032RS32P0 |
5 GHz 802.11a WLAN Power Amplifier 5频段802.11a WLAN功率放大
|
ANADIGICS, Inc.
|
| STW11NB80 6750 |
N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
From old datasheet system
N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
N-CHANNEL 800V - 0.65 - 11A - T0-247 PowerMESH TM MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
