| PART |
Description |
Maker |
| SUD06N10-225L |
N-Channel 100-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| SUP60N10-16L |
N-Channel 100-V (D-S) 175C MOSFET
From old datasheet system
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
N-Channel MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| SUD50P04-09L |
P-Channel, Tj = 175 °C power MOSFET;
low leakage current;
P-Channel 40-V (D-S) 175C MOSFET
P-Channel 40-V (D-S), 175C MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| UPA602T PA602T G11249EJ1V0DS00 UPA602T-A |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FET 6-PIN 2 CIRCUITS
MOS Field Effect Transistor
From old datasheet system
|
NEC Corp.
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| SUU06N10-225L |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6.5A I(D) | TO-251
N-Channel 100-V (D-S) 175C MOSFET
|
Vishay
|
| SUD50M02-12P SUD50N02-12P |
N-Channel 20-V (D0S) 175C MOSFET
N-Channel 20-V (D-S) 175-LC MOSFET
N - CHANNEL 20 - V ( D -S ) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| APT5010JVFR |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
