| PART |
Description |
Maker |
| TC58128AFT |
128-MBIT (16M 】 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58128AFT |
128-MBIT (16M × 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC581282A |
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| IC42S16800L IC42S16800 IC42S16800-7T IC42S16800-7T |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16
16M X 8 FLASH 3V PROM, PBGA24
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
| EDD2516AKTA-6B-E EDD2516AKTA-7A-E EDD2516AKTA-7B-E |
256M bits DDR SDRAM (16M words x 16 bits)
|
Elpida Memory
|
| EDS2516CDTA-75-E EDS2516CDTA |
256M bits SDRAM (16M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
| EDS1616AGTA-75-E EDS1616AGTA EDS1616AGTA-6B-E |
16M bits SDRAM (1M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| IS42VS16400C1-12T IS42VS16400C1-12TI IS42VS16400C1 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
http://
|
| IS42S32200L |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
List of Unclassifed Man...
|
| IS42S16400J-6TL |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
