| PART |
Description |
Maker |
| TLP867 TLP862 TLP866 |
PHOTOINTERRUPTER INFRARED + PHOTODARLINGTONTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| TLP1032 TLP1032AF |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
Toshiba
|
| TLP1023 |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
Toshiba
|
| RPI-121 |
Sensors > Photointerrupters > Linear Phototransistor output
Photointerrupter, double-layer mold type
Photointerrupter/ double-layer mold type
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| RPI-243 |
Photointerrupter/ double-layer mold type
PHOTOINTERRUPTER, DOUBLE-LAYER MOLD TYPE
Sensors > Photointerrupters > Linear Phototransistor output
|
Rohm CO.,LTD.
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm
AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
| 1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
