| PART |
Description |
Maker |
| 2N6707 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE
General Purpose Medium Power Amplifier
|
Continental Device India Limited
|
| 2SD638 2SD0638 |
For Medium-Power General Amplification
|
PANASONIC[Panasonic Semiconductor]
|
| 2N6705 |
General Purpose Medium Power Amplifier
|
Continental Device India Limited
|
| RM75TC-24 RM75TC-2H RM75TC-H RM75TC-M |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| TM25CZ-H TM25CZ-M TM25DZ-H TM25DZ-M |
MEDIUM POWER GENERAL USE INSULATED TYPE 中功率常规使用绝缘型
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RM60DZ-H RM60DZ-M RM60CZ-H RM60CZ-M |
MEDIUM POWER GENERAL USE INSULATED TYPE 中功率常规使用绝缘型
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NTE2347 |
Silicon NPN Transistor General Purpose, Medium Power
|
NTE[NTE Electronics]
|
| TM25DZ-M TM25CZ-H TM25CZ-M |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM20TPM-24 RM20TPM-2402 |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| TM20DA-H TM20DA-M |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
