| PART |
Description |
Maker |
| JANTXV1N827ATR-2 JANS1N827ATR-2 JANTXV1N827TR-2 JA |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Microsemi, Corp.
Microsemi Corporation
|
| MPXM2053GST1 MPXM2053GS MPXM2053 MPXM2053D MPXM205 |
Compensated Pressure Sensor
50 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors
|
Freescale (Motorola)
Freescale Semiconductor, Inc
ETC[ETC]
飞思卡尔半导体(中国)有限公司
|
| 1N945B-1 1N943B-1 1N943A 1N943 1N942B-1 1N942A 1N9 |
Temperature Compensated Zener Reference Diodes(娓╁害琛ュ?榻?撼?哄?浜??绠?
Temperature Compensated Zener Reference Diodes(温度补偿齐纳基准二极
11.12-12.28 zener diode
11.7 VOLT NOMINAL ZENER VOLTAGE
|
Compensated Deuices Inc...
Microsemi Corporation
CDI-DIODE[Compensated Deuices Incorporated]
N.A.
Compensated Devices Incorporated
|
| TPT-13-6016 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-18-6028 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-13-6035 CPT-13-6025 CPT-13-6026 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TPT-18-6037 TPT-18-6027 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| HE-TXO-10C1 HE-VTXO-10C1 HE-TXO-10D1 HE-VTXO-10D1 |
TEMPERATURE COMPENSATED OSCILLATOR
|
List of Unclassifed Manufacturers
ETC
|
| CMT-8-2003 |
Temperature Compensated Amplifier
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| MPXV5050G MPX5050 |
MPX5050 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned,Temperature Compensated and Calibrated
|
Motorola
|
