| PART |
Description |
Maker |
| TYN612MRG TYN612M TYN612MFP TYN612MFPRG -TYN612MRG |
12A SCR
Suitable to Fit modes of control found in Applications such as Voltage regulation Circuits for Motorbikes 以适合的应用中，如电压调整电路的电单车控制模式
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| D390CH18E3L2 D390CH18E3L3 D390CH18E3L4 D390CH18E3L |
2426 A, 1800 V, SCR
1125 A, 1200 V, SCR, TO-200AB
1950 A, 800 V, SCR, TO-200AC
5087 A, 1600 V, SCR
5087 A, 1800 V, SCR
2749 A, 1800 V, SCR
2749 A, 800 V, SCR
2110 A, 3000 V, SCR
2749 A, 600 V, SCR
1895 A, 1000 V, SCR, TO-200AC
2268 A, 1200 V, SCR
5260 A, 1200 V, SCR
1690 A, 800 V, SCR, TO-200AC
2749 A, 1600 V, SCR
5260 A, 1600 V, SCR
2749 A, 1000 V, SCR
1765 A, 1200 V, SCR, TO-200AC
1765 A, 1600 V, SCR, TO-200AC
2749 A, 1200 V, SCR
2749 A, 400 V, SCR
1030 A, 800 V, SCR, TO-200AB
1715 A, 600 V, SCR, TO-200AC
3140 A, 600 V, SCR
2600 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| FT500DL FT500DL-24 FT500DL-4 FT500DL-20 FT500DL-16 |
Phase control SCR. 500A, 400V.
Phase Control SCR 500 Amperes Avg 200-1400 Volts
Phase control SCR. 500A, 1200V.
Phase control SCR. 500A, 200V.
Phase control SCR. 500A, 1000V.
Phase control SCR. 500A, 800V.
Phase control SCR. 500A, 300V.
Phase control SCR. 500A, 500V.
Phase control SCR. 500A, 600V.
Phase control SCR. 500A, 1400V.
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| MCR101G-X-XX-T92-K MCR101G-X-XX-T92-B MCR101-6-B-T |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
0.8 A, 400 V, SCR, TO-92
0.8 A, 600 V, SCR, TO-92
0.8 A, 200 V, SCR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| R216CH12 R325CH02 R800CH04 |
1125 A, 1200 V, SCR
2398 A, 200 V, SCR
5260 A, 400 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| 2N6770 JANTX2N6764 |
500V, 12A, N-Channel, Enhancement Mode Power MOSFET(500V, 12A,N沟道，增强模式功率MOS场效应管)
100V, 38A, N-Channel, Enhancement Mode Power MOSFET(100V, 38A,N沟道，增强模式MOS功率场效应管) 100V的，38A条，N沟道，增强模式功率MOSFET00V的，38A条，沟道，增强模式马鞍山功率场效应管
|
Omnirel
NEC, Corp.
|
| IRKHF200-02GPS20 IRKHF200-04CPS20 IRKHF200-02CPS20 |
314 A, 200 V, SCR
314 A, 400 V, SCR
282.6 A, 800 V, SCR
314 A, 800 V, SCR
282.6 A, 1200 V, SCR
282.6 A, 200 V, SCR
282.6 A, 600 V, SCR
282.6 A, 1000 V, SCR
|
Cooper Bussmann, Inc.
|
| H3055MJ |
N-Channel Enhancement-Mode MOSFET (30V, 12A)
|
Hi-Sincerity Mocroelectronics
|
| HY12N65FT HY12N65T |
650V/ 12A N-Channel Enhancement Mode MOSFET
|
HY ELECTRONIC CORP.
|
| STP3NA90FI STP3NA90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
ST Microelectronics
|
| TTB6C75N08KOF TDB6HK110N06KOF TDB6HK110N12KOF |
60 A, 800 V, SCR
90 A, 600 V, SCR
90 A, 1200 V, SCR
|
|
| 1N1206RA 1N1202A 1N1202RA JAN1N1202A 1N1204RA 1N36 |
12A silicon power rectifier, 200V
12A silicon power rectifier, 1000V
Military Silicon Power Rectifier
12A silicon power rectifier, 400V
12A silicon power rectifier, 600V
12A silicon power rectifier, 800V
|
MICROSEMI[Microsemi Corporation]
http://
|
|
