PART |
Description |
Maker |
IMP1233D IMP1810 IMP1811 IMP1812 IMP1815 IMP1816 I |
4.125V power reset RELAY 024VDC 01A DPDT-XX FORM:2C UC Bi-Lobe Standard Metal Shell Nano Offset Connector Low Power 5V/3.0V P Reset Low Power/ 5V/ P Reset Low Power, 5V, 楼矛P Reset Low Power 5V P Reset Low Power, 5V, P Reset Low Power, 5V, μP Reset 4.375V power reset
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IMP INC. IMP Inc IMP[IMP, Inc] IMP[IMP Inc]
|
Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
BUW36 BUY69A BUY69B BUX48 BUX80 BDX87 BDX88 BDW51 |
Leaded Power Transistor Darlington Power Transistors 15 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-3 INDUCTOR PWR UNSHIELD 470UH SMT Certification- 5.2kVDC Isolation- Power Sharing- Pin Compatible with RH & RK Series, SIP DC-DC Converters- UL94V-0 Package M Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
45912-0026 0459120026 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Power, Signal, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
TA8263BH TA8263 |
Max Power 43 W BTL 4 ch Audio Power IC Max Power 43 W BTL ??4 ch Audio Power IC Max Power 43 W BTL 】 4 ch Audio Power IC IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC Max Power 43 W BTL × 4 ch Audio Power IC Max Power 43 W BTL x 4 ch Audio Power IC
|
Toshiba Semiconductor
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
STR-Y6753 STR-Y6763 STR-Y6754 STR-Y6735 STR-Y6700 |
Power IC for Quasi-Resonant Mode Switching Power Supplies with Low Standby Power
|
Sanken electric
|
MAX5941A06 MAX5941A MAX5941B MAX5941ACSE-T |
IEEE 802.3af-Compliant Power-Over-Ethernet Interface/PWM Controller for Power Devices 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
|
Maxim Integrated Products, Inc.
|
2SD2420A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SB0938 2SB0938A 2SB938 2SB938A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1254 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|