| PART |
Description |
Maker |
| UPC2776TB1 |
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
| UPC2709TB1 |
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
| UPC2749TB-E3-A UPC2749TB |
3 V, SUPER MINIMOLD 1900 MHz SI RFIC AMPLIFIER
|
CEL[California Eastern Labs]
|
| UPC3210TB UPC3210TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
|
NEC[NEC]
|
| P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的，单台BLOk反应腔二极管隔离模块（二五?安高达2400伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| 2SC4957 2SC4957-T1 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
California Eastern Labs
|
| NESG250134-AZ NESG250134-EV09 NESG250134-T1-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE) 邻舍npn型硅锗射频晶体管介质输出功率AMPLIFIVATION00mW的）3针奥尔MINIMOLD34包）
|
Duracell
California Eastern Laboratories, Inc.
|
| NESG210719-T1-A NESG210719-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
California Eastern Labs
|
| NEC66219 2SC5606-T1-A 2SC5606-A |
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
California Eastern Labs
|
| UPA810TC UPA810TC-T1 UPA810 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC Corp.
NEC[NEC]
|
| UPA814 UPA814TC UPA814TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC[NEC]
|
