PART |
Description |
Maker |
EMA6DXV5T5 EMA6DXV5T1 EMA6DXV5T1/D |
Dual Common Emitter Bipolar Resistor Transistor Improved Industry-Standard Single-Ended PWM Controller; Temperature Range: -40°C to 85°C; Package: 8-MSOP Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ON Semiconductor http://
|
MDC03 |
Common Emitter Transistor Array - 3 each PNP and NPN
|
ROHM
|
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor
|
GHz Technology
|
NTE916 |
Integrated Circuit High Current, NPN Transistor Array, Common Emitter
|
NTE[NTE Electronics]
|
AT-33225-BLK AT-33225-TR1 AT-33225 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones 4.8 V NPN Common Emitter Output Power Transistor for AMPS ETACS Phones
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
TD62593 TD62593AFN TD62594AFN TD62597AFN TD62598AF |
8CH SINGLE DRIVER : COMMON EMITTER 8路单驱动:共发射 8ch SINGLE DRIVER:COMMON EMITTER From old datasheet system
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor(4.8 V NPN 硅双极型普通射极晶体管)
|
Agilent(Hewlett-Packard)
|
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor 0.3 Watts, 15 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|
MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo... Microsemi, Corp.
|
UMG5N FMG5A EMG5 |
EMITTER COMMON (DUAL DIGITAL TRANSISTORS)
|
http:// ROHM[Rohm]
|