| PART |
Description |
Maker |
| FQH8N100C |
N-Channel QFETMOSFET 1000V, 8.0A, 1.45
1000V N-Channel MOSFET
|
Fairchild Semiconductor
|
| FQD2N100 FQU2N100 FQU2N100TU FQD2N100TF FQD2N100TM |
1000V N-Channel QFET
1000V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| EP01C AP01C EP01 |
1000V,Fast-Recovery Rectifier Diodes(1000V,快速恢复整流二极管)
|
http://
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| GBU410-G |
Bridge Rectifiers, V-RRM=1000V, V-DC=1000V, I-(AV)=4A
|
Comchip Technology
|
| APT1004R2BN APT1004RBN |
Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 1000V 4.4A 4.00 Ohm / 1000V 4.0A 4.20 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited
Semelab(Magnatec)
|
| STW8NB100 |
N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET
|
ST Microelectronics
|
| STP4NB100 STP4NB100FP |
N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRFNG40 |
POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=3.5ohm, Id=3.9A)
|
IRF[International Rectifier]
|
| APT29F100B2 APT29F100L |
1000V, 29A, 0.46Ω Max, trr ?70ns N-Channel FREDFET
|
Microsemi Corporation
|
