| PART |
Description |
Maker |
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| PS21353-N |
DIP - IPM
600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| BFC16 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC10 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC17 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC42 |
4TH GENERATION MOSFET
|
SEMELAB
Seme LAB
|
| SHB131DGGA-I7-4650U SHB131DGGA-I3-4010U |
4th generation Intel U-series processors
|
Axiomtek Co., Ltd.
|
| USB2602-NU-XX USB2601 USB2601_06 USB2601-NE-XX USB |
4th Generation USB2.0 Flash Media Controller with Integrated Card Power FETs and HS Hub
|
SMSC[SMSC Corporation]
|
| USB2601 USB2602-NU-03 USB2601-NE-03 USB2601-NU-03 |
4TH GENERATION USB2.0 FLASH MEDIA CONTROLLER WITH INTEGRATED CARD POWER FETS AND HS HUB
|
SMSC[SMSC Corporation]
|
| BFC19 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|
