PART |
Description |
Maker |
HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. DDR2 SDRAM - SO DIMM 256MB DDR2 SDRAM - SO DIMM 512MB DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
M39P0R1080E4ZASE M39P0R1080E4ZASF M39P0R9080E4 M39 |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package 512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107 64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
|
意法半导 STMicroelectronics N.V.
|
MT47H16M16BG-3ITB |
256Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash 7.6 mm(0.3 inch) Micro Bright Seven Segment Displays CONNECTOR ACCESSORY LED Light Bars D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
M27C1024-10XF7 M27C1024-12XF7 M27C1024-15XF7 M27C1 |
1-Mbit (64Kb x16) UV EPROM, 100ns 1-Mbit (64Kb x16) UV EPROM, 120ns 1-Mbit (64Kb x16) UV EPROM, 150ns 1-Mbit (64Kb x16) UV EPROM, 200ns 1-Mbit (64Kb x16) UV EPROM, 35ns 1-Mbit (64Kb x16) UV EPROM, 45ns 1-Mbit (64Kb x16) UV EPROM, 55ns 1-Mbit (64Kb x16) UV EPROM, 70ns 1-Mbit (64Kb x16) UV EPROM, 80ns 1-Mbit (64Kb x16) UV EPROM, 90ns 1-Mbit (64Kb x16) OTP EPROM, 120ns 1-Mbit (64Kb x16) OTP EPROM, 70ns 1-Mbit (64Kb x16) OTP EPROM, 90ns 1-Mbit (64Kb x16) OTP EPROM, 55ns 1-Mbit (64Kb x16) OTP EPROM, 45ns 1-Mbit (64Kb x16) OTP EPROM, 35ns 1-Mbit (64Kb x16) OTP EPROM, 150ns 1-Mbit (64Kb x16) OTP EPROM, 100ns
|
SGS Thomson Microelectronics
|
HYMP564U72P8-E3_C4 HYMP512U648 HYMP512U648-E3 HYMP |
240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb 1st ver.
|
HYNIX[Hynix Semiconductor]
|
M36P0R9070E0_06 M36P0R9070E0 M36P0R9070E0ZAC M36P0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
SST39LF160-70-4I-EK SST39VF160-70-4I-EK SST39VF160 |
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48 17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays 16兆位(x16)的多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 3V PROM, 55 ns, PDSO48 64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加
|
Silicon Storage Technology, Inc.
|
HYI25DC512800CE HYI25DC512160CE HYI25DC512160CE-5 |
512-Mbit Double-Data-Rate SDRAM
|
Qimonda AG
|