| PART |
Description |
Maker |
| HYS72T1G042ER |
240-Pin Dual Die Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T256322HP-3.7-A HYS72T256322HP-3S-A HYB18T1G4 |
240-Pin Dual-Die Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T256000HR-3.7-A HYS72T256000HR-3S-A HYS72T256 |
240-Pin Registered DDR SDRAM Modules
|
Qimonda AG
|
| HYS72T128000HP |
240-Pin Registered DDR2 SDRAM Modules
|
http://
|
| HYS72T128000HP2.5-B HYS72T128020HP25F-B HYS72T2562 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T512022HR HYS72T256023HR |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64000HR HYS72T64000HR-3-A HYS72T64000HR-3.7- |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
http://
|
| HYS72T256023 HYS72T512022HR-3.7-A |
240-Pin Registered DDR2 SDRAM Modules 512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
Qimonda AG
|
| M393T6553BZ3-CD5_CC M393T2950BG0-CD5_CC M393T2950B |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 70287-1007 0702871007 |
2.54mm (.100") Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 18 Circuits, 6.10mm (.240") Mating Pin Length, Tin (Sn) Plating
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 18 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| HYS64T256022EDL HYS64T256022EDL-2.5-B HYS64T256022 |
200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules
|
Qimonda AG
|
