| PART |
Description |
Maker |
| DWS-1F3883P20 DWS-1F3883P22 DWS-1F3883P23 DWS-1F38 |
WDM,Filter, 100 GHz, ITU Component
|
JDS Uniphase Corporation
|
| CB2GFA1315533290653 CB2GFA1215533290653 CB2GFA1115 |
Automotive Relays; V23138C1005A403-EV-CBOX ( Tyco Electronics )
200GHz WDM Filter Components for OADM 200GHz波分复用滤波器元件的光分插复用器
|
Honeywell International, Inc.
Panasonic, Corp.
Electronic Theatre Controls, Inc.
Glenair, Inc.
Thomas
BI Technologies, Corp.
Analog Devices, Inc.
|
| MQPI-18 MQPI-18LP MQPI-18LP-01 |
28 Volt Input, 7 Amp MIL COTS EMI Filter for VI Chips
|
Vicor Corporation
|
| SSB-COB6527GW |
65mm x 27mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 565mm GREEN CHIPS, 44 CHIPS, 4.2V 220mA
|
LUMEX INC.
|
| FINF050-100CLA1 FINF050-100CLA2 FINF050-100CLB1 FI |
50GHz Interleaver
|
Finisar Corporation.
|
| EIC0910-5 |
9.50-10.50GHz,5W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFK38A3745 |
13.75-14.50GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| EIC1414-2 |
14.00-14.50GHz 2-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MADP-000910-13050T MA4AGCP910 MA4AGFCP910 |
AlGaAs Flip-Chip PIN Diode 100MHz to 50GHz
|
MACOM[Tyco Electronics]
|
| MGFK38A3745 |
13.75-14.50GHz BAND 6W INTERNALLY MATCHED GaAs FET 13.75 - 14.50GHz频段6W内部匹配砷化镓场效应
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BM-41EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
