| PART |
Description |
Maker |
| SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| 2SK3230B |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
N-CHANNEL SILICON J-FET
|
NEC
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| XP8081 |
Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC3583 |
NF 1.2 dB TYP. f = 1.0 GHz Ga 13 dB TYP. f = 1.0 GHz
NPN Silicon Epitaxial Transistor
|
TY Semiconductor Co., L...
TY Semicondutor
|
| SMPJ176 SMPJ177 |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236
P-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| EN7671A 2SK3738-TL-E 2SK3738-12 EN7671 |
N-Channel JFET, 40V, 50 to 130uA, 0.13mS, SMCP
N-Channel Junction Silicon FET Impedance Converter Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 2N5432 |
N-CHANNEL SILICON JUNCTION
|
New Jersey Semi-Conductor P...
|
| 2SK404 |
N-Channel Junction Silicon FET N-Channel Junction Silicon FET
|
SANYO
|
