| PART |
Description |
Maker |
| GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| GT8G136 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT20G101SM E001913 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| GT25G101SM E001917 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| GT5J301 GT5J301_07 GT5J30107 |
GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT8G151 |
IGBT for strobe flash
|
TOSHIBA
|
| RJP4301APP-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
