| PART |
Description |
Maker |
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
| S79FL256S |
256 Mbit (32 MB)/512 Mbit (64 MB), 3 V, Dual-Quad SPI Flash
|
Cypress Semiconductor
|
| SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
| SST39VF010-70-4I-B3K SST39VF010-70-4C-B3K SST39VF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
http://
Silicon Storage Technol...
|
| 39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| M58PR001LE M58PR001LE96ZAC5 M58PR001LE96ZAD5 M58PR |
512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| M58PR512LE M58PR512LE96ZAC5 M58PR512LE96ZAD5 M58PR |
512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| CY14B104NA-BA20XI CY14B104NA-BA20XIT CY14B104NA-BA |
4-Mbit (512 K ? 8/256 K ? 16) nvSRAM
4-Mbit (512 K × 8/256 K × 16) nvSRAM
|
Cypress Semiconductor
http://
|
| CY7C1354C-200AXC CY7C1354C-200BGC CY7C1354C-200AXI |
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM with NoBL Architecture
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM with NoBL?/a> Architecture
|
Cypress Semiconductor
|
| M29W400DB55N1 M29W400DB55N1E M29W400DB55N1F M29W40 |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
STMicroelectronics
|
| CY14B104K-ZS45XI CY14B104K-ZS25XI CY14B104K-ZS25XI |
4-Mbit (512 K x 8/256 K x 16) nvSRAM with Real Time Clock 25 ns and 45 ns access times
|
Cypress Semiconductor
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
