PART |
Description |
Maker |
2SD1631 |
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Micro Motor Drive Hammer Drive Applications Switching Applicati
|
TOSHIBA
|
NCP1050ST100 NCP1050ST44 NCP1052P136 NCP1050/D NCP |
Monolithic High Voltage Gated Oscillator Power Switching Regulator 2 A SWITCHING REGULATOR, 50 kHz SWITCHING FREQ-MAX, PDSO4 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效,5安培开关稳压器 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 2 A SWITCHING REGULATOR, 154 kHz SWITCHING FREQ-MAX, PDIP8 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 24字符X2行,5X7点矩阵字符和光标
|
ON Semiconductor
|
BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc. STMicroelectronics
|
FS50UMJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
|
MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
2SB1641 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. From old datasheet system HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
FS70VSJ-06F FS70VSJ-06F-A1 FS70VSJ-06F-T11 |
70 A, 60 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET High-Speed Switching Use Nch Power MOS FET Transistors>Switching/MOSFETs
|
Renesas Electronics Corporation
|
MP4403 E002514 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
LTC1697 LTC1697EMS LTC1697EMSPBF |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS High Efficiency Low Power 1W CCFL Switching Regulator
|
LINEAR TECHNOLOGY CORP
|
MP4401 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS / HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
|
Toshiba Semiconductor
|
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|