| PART |
Description |
Maker |
| NVF4-505 NVF4-5AS30ADC12VR NVF4-5AZ30ADC12VR NVF4- |
Contact load capacity up to 30A
|
DB Lectro Inc
|
| JQX-54FE JQX-54FEAZ20BDC12VC JQX-54FEAZ20BDC24VC J |
Compact high capacity relay for inductive load, rushing current of 70A and steady-state current of 20A.
|
DB Lectro Inc
|
| AQZ102 |
Slim type with high capacity up to 4A DC load type also available
|
Panasonic Semiconductor
|
| S2-L1-24V S2-12V S2-24V S2-3V S2-48V S2-5VDC S2-12 |
4 A CAPACITY, THE VARIETY OF CONTACT ARRANGEMENTS
|
Panasonic Semiconductor
|
| AEP15024 AEP15112 AEP15124 AEP15312 AEP15324 AEP16 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Without indicator contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact..
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact..
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Without indicator contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
|
Matsushita Electric Works(Nais)
|
| AM1535F AM1500F AM1501F AM1503F AM1505F AM1506F AM |
HIGH CONTACT CAPACITY, PRECISE OPERATION
HIGH CONTACT CAPACITY, PRECISE OPERATION
|
Panasonic Semiconductor
|
| M3062AFCVGP M30626FHPFP M30626FHPGP M30627FHPGP M3 |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K 4K bytes, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K 4K bytes, RAM capacity = 31K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 256K 4K bytes, RAM capacity = 20K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 96K bytes, RAM capacity = 5K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 64K bytes, RAM capacity = 4K bytes
Single-chip 16-bit CMOS microcomputer, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K 4K bytes, RAM capacity = 10K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 64K 4K bytes, RAM capacity = 4K bytes,
Single-chip 16-bit CMOS microcomputer, RAM capacity = 4K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 512K 4K bytes, RAM capacity = 31K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 16K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 24K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 31K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 31K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 24K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 16K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K bytes, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 256K bytes, RAM capacity = 20K bytes
|
Renesas
|
| CS130 CT130 |
Contact Form: 1a Load Voltage: 400V Maximum
|
Coto Technology
|
| NVFS NVFSA15DC12V NVFSA30DC12V NVFSA30DC24V NVFSA1 |
Small size and light weight. Heavy contact load (30A)
|
DB Lectro Inc.
|
| MAX133CQH MAX133C/D MAX133CPL MAX134 MAX134C/D MAX |
3Digit DMM Circuit
Lithium/Manganese Dioxide; Voltage Rating:3V; Battery Capacity:925mAh; Battery Terminals:Pressure Contact RoHS Compliant: NA
3? Digit DMM Circuit
|
Maxim Integrated Products, Inc.
|
| LZ-B12HSE-HV-UC LZ-12HSE-HV-UC LZ-B12HSE-KHV-UC LZ |
POWER RELAY 1 POLE-1, 3, 5, 10 A(MEDIUM LOAD CONTROL)
POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.075A (COIL), 6VDC (COIL), 450mW (COIL), 3A (CONTACT), 150VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.038A (COIL), 12VDC (COIL), 450mW (COIL), 5A (CONTACT), 150VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
POWER/SIGNAL RELAY, SPDT, MOMENTARY, 0.013A (COIL), 48VDC (COIL), 600mW (COIL), 3A (CONTACT), 150VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.11A (COIL), 3VDC (COIL), 330mW (COIL), 5A (CONTACT), 150VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
|
Fujitsu Component Limited.
Fujitsu Component Limit...
|
|
