| PART |
Description |
Maker |
| UPD1937C |
MOS DIGITAL INTEGRATED CIRCUIT
|
NEC
|
| UPD1705C-012 |
MOS DIGITAL INTEGRATED CIRCUIT
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| TC59LM836DKG-30 TC59LM836DKG-33 TC59LM836DKG-40 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
| TC58FVM6B2AFT65 TC58FVM6B2AXB65 TC58FVM6T2AXB65 TC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NVG0S3ETA00 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC59RM718MB |
(TC59RM716MB/RB / TC59RM718MB/RB) MOS Digital Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
| TC55VEM316AXBN55 TC55VEM316AXBN TC55VEM316AXBN40 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC55VD1618FF-133 TC55VD1618FF-150 TC55VD1618FF-167 |
1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC55V16100FT-10 TC55V16100FT-12 TC55V16100FT-15 |
1,048,576-WORD BY 16-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55V4366FF-150 TC55V4366FF-133 TC55V4366FF-167 |
131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Semiconductor
Toshiba Corporation
Toshiba, Corp.
|
| TC55V8200FT-12 TC55V8200FT-15 TC55V8200FT-10 |
2,097,152-WORD BY 8-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC51WKM616AXBN75 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
