| PART |
Description |
Maker |
| EUP2796JIR1 EUP2796 |
32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array, Multi-Chip Module (MCM) 双显示器白光LED驱动3/2X开关电容升
512K x 32, 5V, MCM, Even-Sectored 双显示器白光LED驱动3/2X开关电容升
Dual-Display White LED Driver with 3/2X Switched Capacitor Boost
|
Eutech Microelectronics, Inc.
德信科技股份有限公司
Eutech Microelectronics Inc
|
| 79C0408 79C0408RT2FH-15 79C0408RT2FK-15 79C0408RT2 |
4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 200 ns, DFP40
4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 120 ns, DFP40
4 Megabit EEPROM MCM
512K X 8 EEPROM 5V MODULE, 150 ns, DFP40
4 Megabit EEPROM MCM
|
Maxwell Technologies, Inc
|
| CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 |
Very high speed: 55 ns and 70 ns
(CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM
32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万（256K × 8/128K × 16）位快闪记忆体（V的电源电56K × 8/128K × 16闪速存储器
2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
|
Fujitsu, Ltd.
Fujitsu Limited
|
| LCL3504-L LCL1904-L |
MCM LNA
|
RFHIC
|
| LCL2603-L LCL3503-L |
MCM LNA
|
RFHIC
|
| LCL2302-L LCL2702-L |
MCM LNA
|
RFHIC
|
| AD10242-17 |
MCM A/D Converter
|
Analog Devices
|
| LCL0402-L LCL0902-L |
(LCLxx02-L) MCM LNA
|
RFHIC
|
| LCL0912-L |
(LCLxx12-L) MCM LNA
|
RFHIC
|
| GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步静态RAM（带2位脉冲地址计数器）)
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
| 89C1632RPQI25 89C1632RPQI30 89C1632RPQK20 89C1632R |
16 Mbit (512K x 32-bit) MCM SRAM
|
Maxwell Technologies
|
