| PART |
Description |
Maker |
| LD271 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor Group
|
| SFH405 SFH40512 Q62702P0835 |
GaAs-IR-Lumineszenzdiode
|
OSRAM GmbH
|
| SFH4205 |
(SFH4200 / SFH4205) Schnelle GaAs-IR-Lumineszenzdiode
|
Infineon Technologies
|
| SFH4205 Q62702-P5165 Q62702-P978 SFH4200 |
Schnelle GaAs-IR-Lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm)
High-Speed GaAs Infrared Emitter (950...
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| CF004_06 CF004 CF004-01 CF004-02 CF004-03 |
GaAs Pseudomorphic HEMT and MESFET Chips KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
Mimix Broadband, Inc.
MIMIX[Mimix Broadband]
|
| TG2206F |
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
| LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
| SBB-4089 SBB-4089Z |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫，级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
Electronic Theatre Controls, Inc.
http://
|
| GN04022N |
GaAs device - GaAs MMICs - Switch
|
Panasonic
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
