| PART |
Description |
Maker |
| SPLMY81X2 |
Passively Cooled Diode Laser Bar, 35 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMN91G2 |
Passively Cooled Diode Laser Bar, 50 W cw at 915 nm
|
OSRAM GmbH
|
| LSC2110-622-ST LSC2110-622 LSC2110-622-BI LSC2110- |
2.5 mW 14 Pin DIL Cooled Laser Module
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| C484 |
(C48x) 2.5 G-Bits Cooled Laser Transmitters
|
Agere Systems
|
| LSC4110 LSC4110-BI LSC4110-D4 LSC4110-DN LSC4110-F |
1 mW 14 Pin DIL Cooled Laser Modules 1毫瓦14针迪勒冷激光模
|
Silicon Laboratories, Inc.
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
http://
Agilent(Hewlett-Packard...
|
| 2219-010MLS 2219-010SLS 2219-020MLS 2219-020SLS 22 |
Air-Cooled Argon Ion Laser Heads in Cylindrical and Rectangular Packages
|
JDS Uniphase Corporation
|
| Q62702-P358 Q62702-P1617 SPL_CG SPLCG85 SPLCG98 SP |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 850 nm, LASER DIODE
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 激光二极管W连续类激光产品的Submount 1.0
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
