| PART |
Description |
Maker |
| EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的（200万?4Bank2）同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| K4H560838D-TC/LB0 K4H560838D-TC/LA2 K4H560838D-TC/ |
64M X 4 DDR DRAM, 0.7 ns, PDSO66
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP -40 to 125 256Mb
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PDIP 256Mb
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC 256Mb
10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-SOIC -40 to 85
10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-TSSOP -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EBR25UC8ABKD-8C EBR25UC8ABKD-AD EBR25UC8ABKD-AE EB |
256MB 32-bit Direct Rambus DRAM RIMM?/a> Module
256MB 32-bit Direct Rambus DRAM RIMM Module
256MB 32-bit Direct Rambus DRAM RIMM垄芒 Module
|
Elpida Memory
|
| EM488M3244VBA-8F |
256Mb SDRAM
|
ETC[ETC]
|
| EM488M3244VBA-8F |
256Mb SDRAM
|
Electronic Theatre Controls, Inc.
|
| NT256D64S88A0G |
256MB DIMM
|
Nanya Technology
|
| NT256D64S8HA0G-6 |
256MB DIMM
|
Nanya Technology
|
| A2V56S20BTP A2V56S30BTP |
256Mb SDRAM
|
UST
|
| HY57V56420CLT-H HY57V56420CLT-K HY57V56420CLT-6 HY |
SDRAM - 256Mb
|
Hynix Semiconductor
|
| W942508BH |
256Mb DDR
|
Winbond
|
