| PART |
Description |
Maker |
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| AS5C4009ECJ-85L_883C AS5C4009ECJ-85L_IT AS5C4009EC |
512K x 8 SRAM Ultra Low Power SRAM
512K X 8 STANDARD SRAM, 100 ns, CDIP32
512K X 8 STANDARD SRAM, 85 ns, CDSO32
512K X 8 STANDARD SRAM, 70 ns, CDSO32
512K X 8 STANDARD SRAM, 55 ns, CDSO32
|
MICROSS COMPONENTS
AUSTIN SEMICONDUCTOR INC
|
| BS616LV8017ECG70 BS616LV8017DIP55 BS616LV8017ECG55 |
Very Low Power CMOS SRAM 512K X 16 bit
|
Brilliance Semiconductor
Brilliance Semiconducto...
|
| LY62L51216 LY62L51216E LY62L51216GL LY62L51216GV L |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62W51216GL-55LLI LY62W51216GL-55SLI LY62W51216GL |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| IS62WV51216ALL IS62WV51216BLL |
(IS62WV51216A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| BS616LV8013BI BS616LV8013 BS616LV8013BC |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
|
BSI[Brilliance Semiconductor]
|
| WS628512LLT-70 WS628512LLST-70 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
|
永盛国际集团
|
| WS628512LLT-70 WS628512LLST-70 WS628512LLFP-70 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
|
WINGS[Wing Shing Computer Components]
|
