| PART |
Description |
Maker |
| LET9120 |
120W 32V HF to 2GHz LDMOS TRANSISTOR in push-pull package
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
|
ST Microelectronics
STMicroelectronics
|
| PD55008L-E |
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
|
STMicroelectronics
|
| PD55008TR-E PD55008-E PD55008S-E PD55008STR-E |
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| PD57002-E10 PD57002S-E PD57002-E |
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
|
STMicroelectronics
|
| PD54003-E PD54003TR-E PD54003S-E PD54003STR-E |
RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| PD20010-E PD20010S-E PD20010STR-E |
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
|
STMicroelectronics
|
| PD57018S-E PD57018STR-E PD57018-E PD57018TR-E |
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
|
STMicroelectronics
|
| PD57030TR-E PD57030-E10 PD57030S-E PD57030STR-E |
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
|
STMicroelectronics
|
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| SD57030-01 |
RF POWER TRANSISTORS THE LDMOST FAMILY
|
ST Microelectronics
|
