| PART |
Description |
Maker |
| MC-4532CC726XF-A10 MC-4532CC726XF-A80 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MC-4532CC727PF-A75 MC-4532CC727 MC-4532CC727EF-A75 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
| THMY7232G1EG-80 |
32M Word x 72 Bit Synchronous DRAM Module(32M字x 72位同步DRAM模块) 32M的字× 72位同步DRAM模块2M的字× 72位同步的DRAM模块
|
Toshiba, Corp.
|
| UPD44323362F1-C40-FJ1 UPD44323362 |
32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC[NEC]
|
| UPD23C32380GZ-XXX-MJH UPD23C32340 UPD23C32340F9-BC |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC[NEC]
|
| UPD23C32000ALGY-XXX-MKH UPD23C32000AL UPD23C32000A |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)
|
NEC[NEC]
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| MR26V51203L-XXXMBE MR26V51203L MR26V51203L-XXXMB |
32M-Word x 16-Bit or 64M-Word x 8-Bit
|
OKI[OKI electronic componets]
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MB82DP02183C-65LWT MB82DP02183C-65L MB82DP02183C-6 |
32M Bit (2 M word 】 16 bit) Mobile Phone Application Specific Memory
|
FUJITSU[Fujitsu Media Devices Limited]
|
