| PART |
Description |
Maker |
| BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration
Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
| KDS135 |
Switching Diode
SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| CMEDA-6I |
SMD Switching Diode QUAD: MONOLITHIC
SURFACE MOUNT SUPERmini MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY
|
CENTRAL[Central Semiconductor Corp]
|
| FE3B FE3D FE3C |
Diode Switching 100V 3A 2-Pin Case G-4
Diode Switching 200V 3A 2-Pin Case G-4
Diode Switching 150V 3A 2-Pin Case G-4
|
New Jersey Semiconductor
|
| DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode
Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
| FD700 FD777 |
Diode Switching 30V 0.05A 2-Pin DO-7
Diode Switching 15V 0.05A
|
New Jersey Semiconductor
|
| CMHD7006 |
SMD Switching Diode Single: High Voltage
SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
