| PART |
Description |
Maker |
| IRF7306PBF |
GENERATION V TECHNOLOGY
|
International Rectifier
|
| IRLML5103TRPBF |
Generation V Technology
|
TY Semiconductor Co., L...
|
| IRF7404TRPBF |
generation v technology
|
International Rectifier
|
| IRF7389PBF IRF7389TRPBF IRF7389PBF-15 |
HEXFET Power MOSFET
Generation V Technology
|
IRF
International Rectifier
|
| IDT8T49N008I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IRF7343PBF IRF7343TRPBF |
generation v technology
HEXFET Power MOSFET
|
International Rectifier
|
| KRF7401 |
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7201 IRF7201PBF IRF7201TR |
Generation V Technology
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SGB02N12007 SGB02N120 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW25N12009 SGW25N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
