| PART |
Description |
Maker |
| CGH25120F CGH25120F-TB CGH25120F-AMP |
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE
|
Cree, Inc
|
| KP10F-25 |
2480 MHz - 2700 MHz PARABOLIC ANTENNA, 35.1 dBi GAIN, 2.7 deg 3dB BEAMWIDTH
|
ANDREW CORP
|
| FP10F-25D HP12-25D HP10-25D FP10-25D |
2480 MHz - 2700 MHz PARABOLIC ANTENNA, 35.2 dBi GAIN
2480 MHz - 2700 MHz PARABOLIC ANTENNA, 37.2 dBi GAIN
2480 MHz - 2700 MHz PARABOLIC ANTENNA, 35.7 dBi GAIN
2480 MHz - 2700 MHz PARABOLIC ANTENNA, 35.3 dBi GAIN
|
CommScope, Inc.
ANDREW CORP
|
| 23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor
1.7 Watts, 20 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|
| 23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor
2.5 Watts, 20 Volts, Class A Linear to 2300 MHz
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.2A I(C) | FO-41BVAR
|
GHZTECH[GHz Technology]
|
| 2324-12L |
12 W, 20 V, 2300-2400 MHz common base transistor
12 Watts - 20 Volts, Class C Microwave 2300 - 2400 MHz
NV Trimmer Potentiometer
|
GHz Technology
|
| 2301 |
2.3 GHz Class C, Common Base; fO (MHz): 0; P(out) (W): 1.5; P(in) (W): 0.24; Gain (dB): 8.5; Vcc (V): 20; Cob (pF): 4; Case Style: 55BT-1 S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
1.5 Watt - 20 Volts, Class C Microwave 2300 MHz
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
GHZTECH[GHz Technology]
GHz Technology, Inc.
|
| ZB4PD-232-50W |
High Power Combiner 4 Way-0 50Ω 600 to 2300 MHz
High Power Combiner 4 Way-0 50ヘ 600 to 2300 MHz
|
Mini-Circuits
|
| BGA7124 |
400 MHz to 2700 MHz 1/4 W high linearity Si amplifier
|
NXP Semiconductors
|
| PXAC241702FCV1R250 PXAC241702FCV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ?2400 MHz
|
Infineon Technologies A...
|
| PTFB241402F |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ?2400 MHz
|
Infineon Technologies AG
|
| CMM2308-AJ-000T |
800 to 2700 MHz High Dynamic Range Amplifier
|
Mimix Broadband
|
