| PART |
Description |
Maker |
| STGD18N40LZ STGB18N40LZ STGB18N40LZ-1 STGB18N40LZT |
EAS 180 mJ - 400 V - internally clamped IGBT
|
http://
STMicroelectronics
|
| IRF640 RF1S640SM FN1585 |
18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
INTERSIL CORP
|
| 0405SC-1000M MICROSEMIPOWERPRODUCTSGROUP-0405SC-10 |
SiC UHF: 400-450MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1000; P(in) (W): 180; Gain (dB): 8; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 UHF BAND, Si, N-CHANNEL, RF POWER, JFET
1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT
|
Microsemi, Corp.
Microsemi Corporation
|
| M57788LR 57788LR |
400-430MHz, 13.5V, 47W, FM MOBILE RADIO 400 - 430MHz3.5V7W配合，调频移动通信
400-430MHz / 13.5V / 47W / FM MOBILE RADIO
From old datasheet system
MITSUBISHI RF POWER MODULE 400-430MHz, 13.5V, 47W, FM MOBILE RADIO
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 1SMA33AT3 1SMA70AT3 1SMA70AT3G 1SMA9.0AT3 1SMA9.0A |
400 Watt Peak Power Zener Transient Voltage Suppressors 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
| 1SMA43CAT3G |
400 Watt Peak Power Zener Transient Voltage Suppressors 400 W, BIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
| DSS-113PIN DS-113PIN DSS-113 DS-113 |
Two-Way Power Divider, 400 KHz - 400 MHz
|
Tyco Electronics
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| AD9851 AD9851BRS |
180 MHz Complete DDS synthesizer
CMOS 180 MHz DDS/DAC Synthesizer
|
AD[Analog Devices]
|
| PC1414BSR |
14,400 bps modem with MNP classes 2-5, v.42, v.42bis, 14,400 bps group 3 fax, stackthrough bus.
|
XECOM
|
| SFA60PME SFA40PME SFA50PME |
68 AMPS 400 - 600 VOLTS 40 nsec HYPER FAST PDSITIVE CENTERTAP RECTIFIER 6 A, 400 V, SILICON, RECTIFIER DIODE, TO-254AA
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
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