PART |
Description |
Maker |
FCH25N60N |
N-Channel SupreMOSMOSFET 600V, 25A, 126m
|
Fairchild Semiconductor
|
IRG4PC40K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
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IRF[International Rectifier]
|
B25JS60K B25JS60KL B25CS40KL B25CS40DL B25DC60DL B |
THYRISTOR MODULE|SCR|DUAL|CC|400V V(RRM)|25A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |负| 600V的五(无线资源管理)|5A我(翻译 Metal Oxide Resistor - RS 2 1K 5% W 晶闸管模块|倍增|半CNTLD |阳性| 1KV交五(无线资源管理)|5A我(翻译 THYRISTOR MODULE|SCR|DUAL|CA|400V V(RRM)|25A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 400V五(无线资源管理)|5A我(翻译 THYRISTOR MODULE|SCR|DUAL|CA|600V V(RRM)|25A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 600V的五(无线资源管理)|5A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.2KV五(无线资源管理)|5A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 600V的五(无线资源管理)|5A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1KV交五(无线资源管理)|5A我(翻译
|
Vishay Intertechnology, Inc. Cornell Dubilier Electronics, Inc. Allegro MicroSystems, Inc. Atmel, Corp. NXP Semiconductors N.V.
|
D25XB60 |
General Purpose Rectifiers(600V 25A)
|
Shindengen Electric Mfg... SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics STMicroelectronics 意法半导
|
HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND |
From old datasheet system 25A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N沟道绝缘栅双极型晶体 5 A, 1200 V, N-CHANNEL IGBT, TO-247
|
INTERSIL[Intersil Corporation] Fairchild Semiconductor, Corp.
|
SSH25N40 SSH25N35 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 400V五(巴西)直|5A条(丁)|47VAR TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 25A I(D) | TO-247VAR
|
|
F1826HD600 F1826CCD600 F1856HD600 F1856CAD1400 F18 |
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|25A I(T) COMMON CATHODE DIODE ARRAY|MODULE-S THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|55A I(T) COMMON ANODE DIODE ARRAY|MODULE-S 共阳极二极管阵列|模块 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.4KV V(RRM)|40A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.4KV五(无线资源管理)| 40A条疙(T THYRISTOR MODULE|SCR DOUBLER|1.4KV V(RRM)|40A I(T) 晶闸管模块|可控硅倍增| 1.4KV五(无线资源管理)| 40A条疙T THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|25A I(T)
|
MtronPTI
|
FQI8N60C FQB8N60C FQB8N60CTM |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQP2N60C FQPF2N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|