| PART |
Description |
Maker |
| APT20M38SVR APT20M38SVRG |
200V 67A 0.038W
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| STP40N20 |
N-CHANNEL 200V - 0.040 Ohm - 40A TO-220/TO-247 LOW GATE CHARGE STripFET MOSFET
|
ST Microelectronics
|
| STP3015L STB3015 STB3015L 6057 |
From old datasheet system
N - CHANNEL 30V - 0.013 - 40A - D 2 PAK/TO-220 STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET -通道30V 0.013欧姆- 40A D2PAK/TO-220 STripFETO的功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| MBR861 MBR862 MBR864 MBR866 |
Fast recovery power rectifier. 40A, 100V.
Fast recovery power rectifier. 40A, 200V.
Fast recovery power rectifier. 40A, 400V.
Fast recovery power rectifier. 40A, 600V.
|
Motorola
|
| Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218 可控硅| 200伏五（DRM）的| 40A条口（T）的有效值|18
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 12A条口T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 200伏五（DRM）的| 5A条口（T）的有效值|20
TRIAC|600V V(DRM)|15A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 15A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 400V五（DRM）的| 25A条口（T）的有效值|20
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 4A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|500V V(DRM)|4A I(T)RMS|TO-220 可控硅| 500V五（DRM）的| 4A条口T）的有效值|20
TRIAC|400V V(DRM)|3A I(T)RMS|TO-202 可控硅| 400V五（DRM）的| 3A条口（T）的有效值|02
TRIAC|400V V(DRM)|4A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 4A条口（T）的有效值|20
TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 12A条口（T）的有效值|20
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 12A条口（T）的有效值|20
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218 可控硅| 400V五（DRM）的| 40A条口（T）的有效值|18
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|20
TRIAC|600V V(DRM)|40A I(T)RMS|TO-218 可控硅| 600V的五（DRM）的| 40A条口（T）的有效值|18
TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|800V V(DRM)|15A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 15A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
TRIAC|400V V(DRM)|4A I(T)RMS|TO-202 可控硅| 400V五（DRM）的| 4A条口（T）的有效值|02
Transient Voltage Suppressor Diodes 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 8A条口（T）的有效值|20
TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 700V的五（DRM）的| 25A条口（T）的有效值|20
可控硅| 200伏五（DRM）的| 10A条口（T）的有效值|20
TRIAC|300V V(DRM)|6A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-39
TRIAC|600V V(DRM)|8A I(T)RMS|TO-202
TRIAC|500V V(DRM)|8A I(T)RMS|TO-202
TRIAC|200V V(DRM)|3A I(T)RMS|TO-202
TRIAC|500V V(DRM)|25A I(T)RMS|TO-220
TRIAC|200V V(DRM)|8A I(T)RMS|TO-202
TRIAC|600V V(DRM)|3A I(T)RMS|TO-220
TRIAC|400V V(DRM)|8A I(T)RMS|TO-202
TRIAC|800V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|PRESS-13
TRIAC|500V V(DRM)|15A I(T)RMS|TO-3
TRIAC|500V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|200V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|200V V(DRM)|15A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|400V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|600V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|200V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|200V V(DRM)|10A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|200V V(DRM)|20A I(T)RMS|TO-220
TRIAC|200V V(DRM)|6A I(T)RMS|TO-220
TRIAC|500V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|600V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|10A I(T)RMS|TO-8
RF inductor, ceramic core, 5% tol, SMT, RoHS
TRIAC|400V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|600V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|500V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|200V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|15A I(T)RMS|TO-220
TRIAC|200V V(DRM)|15A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|500V V(DRM)|12A I(T)RMS|TO-220
TRIAC|200V V(DRM)|12A I(T)RMS|TO-220AB
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220
TRIAC|600V V(DRM)|6A I(T)RMS|TO-220
TRIAC|700V V(DRM)|40A I(T)RMS|TO-218
TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|5A I(T)RMS|TO-220
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220
TRIAC|600VV(DRM)|8AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|FBASE-R
TRIAC|600VV(DRM)|25AI(T)RMS|CAN
TRIAC|600VV(DRM)|25AI(T)RMS|TO-39
TRIAC|800VV(DRM)|25AI(T)RMS|TO-220AB
THYRISTORMODULE|TRIAC
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220AB
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218VAR
TRIAC|600VV(DRM)|25AI(T)RMS|PRESS-13
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
|
Samsung Semiconductor Co., Ltd.
Vishay Intertechnology, Inc.
STMicroelectronics N.V.
Xicon Passive Components
Anpec Electronics, Corp.
Littelfuse, Inc.
International Rectifier, Corp.
Motorola Mobility Holdings, Inc.
Electronic Theatre Controls, Inc.
Mitsubishi Electric, Corp.
Jiangsu Changjiang Electronics Technology Co., Ltd.
GTM, Corp.
|
| IRFU210B IRFR210B IRFU210BTLTUFP001 IRFU210BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR210 & IRFR210A
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFU210 & IRFU210A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFU220B IRFR220B IRFU220BTLTUFP001 IRFU220BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR220 & IRFR220A
200V N-Channel B-FET / Substitute of IRFU220 & IRFU220A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF620B IRF620BFP001 IRFS620BFP001 |
200V N-Channel B-FET / Substitute of IRFS620 & IRFS620A
200V N-Channel B-FET / Substitute of IRF620 & IRF620A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF10N20C FQPF10N20CNL |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 9.5 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQD18N20V2 FQU18N20V2 FQD18N20V2TF FQD18N20V2TM FQ |
200V N-Channel Advanced QFET V2 series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFU230B IRFR230B IRFU230BTLTUFP001 |
200V N-Channel B-FET / Substitute of IRFU230A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
