PART |
Description |
Maker |
ACT2265SMX-4 |
compact 4 pad, high quality, low aging, seam welded crystal
|
Advanced Crystal Technology
|
ACT2205SMX-4 |
compact 4 pad, high quality, low aging, seam welded crystal
|
Advanced Crystal Technology
|
ACT750SMX-4-12 |
low cost, 4 & 2 pad, high quality, low aging 7x5mm SMD Crystal
|
Advanced Crystal Techno...
|
ACT320SMX-412 |
low cost, 4 pad, high quality, low aging 3X2.5mm SMD Crystal in a ceramic base
|
Advanced Crystal Technology
|
ACT320SMX-4 |
low cost, 4 pad, high quality, low aging 3X2.5mm SMD Crystal in a ceramic base
|
Advanced Crystal Technology
|
ACT2016SMX-4 |
extremely compact, high quality, low aging, seam welded crystal
|
Advanced Crystal Technology
|
ACT2208SMX-4 |
extremely compact, high quality, low aging, seam welded crystal
|
Advanced Crystal Technology
|
OCXO-36 |
HIGH RELIABILITY FOR LOW COST AGING OF -0.001 PPM/DAY IN COMPACT PACKAGE
|
PETERMANN-TECHNIK
|
Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
D..CRCW....LR |
Thick Film, Rectangular, Low Value Resistors, Special metal glaze on high quality ceramic, Protective overglaze, SnPb contacts on Ni barrier layer, Suitable for current sensors and shunts
|
Vishay
|
P2NR |
For suggested pad layout, see drawing: PAD-01
|
All Sensors Corporation
|
CS40C-P1C28-CB000 |
Uniform high quality illumination
|
PARA LIGHT ELECTRONICS ...
|