PART |
Description |
Maker |
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
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Cypress Semiconductor Corp.
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M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM 4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp) 4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位(为512k × 8),5V的异步SRAM
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
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A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes 4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
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Intel Corporation Intel Corp.
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SST28SF040A SST28SF040A-120 SST28SF040A-120-4C-EH |
4 Mbit (512K x8) SuperFlash EEPROM 4 Mbit (512K x 8) super-flash EEPROM
|
SST[Silicon Storage Technology, Inc]
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CY62157ELL-55ZSXE CY62157ELL-55BVXE CY62157ELL-45Z |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48 8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 45 ns, PDSO44
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Cypress Semiconductor Corp.
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CY62157DV3006 CY62157DV30L-55BVXE CY62157DV30L-55B |
8-Mbit (512K x 16) MoBL㈢ Static RAM 8-Mbit (512K x 16) MoBL? Static RAM 8-Mbit (512K x 16) MoBL垄莽 Static RAM 8-Mbit (512K x 16) MoBL Static RAM
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Cypress Semiconductor
|
CY7C1363B-133AJC CY7C1363B-133AJI CY7C1363B-133AI |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 6.5 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 7.5 ns, PBGA119 CONNECTOR ACCESSORY
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
CY62148ELL-55SXA |
4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
AB28F400BX-T90 A28F400BX-B AB28F400BX-B90 |
4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT 256K x16/ 512K x8 BOOT BLOCK FLASH MEMORY FAMILY JT 23C 2#16 21#20 SKT RECP JT 32C 32#20 PIN RECP 4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY 4兆位56K x16。为512k × 8)启动块闪存系列 4-MBIT (256K x16, 512K x8) BOOT BLOCK FLASH MEMORY FAMILY
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http:// Intel Corporation Intel Corp. Intel, Corp.
|
CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR-II SRAM 4-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM 256K (32K x 8) Static RAM SPI串行EEPROM
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Analog Devices, Inc. Electronic Theatre Controls, Inc.
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CY7C1371D |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)流通式SRAM(NoBL结构 18兆位(为512k × 36/1M × 18)流体系结构,通过与总线延迟18 MB的(12k × 36/1M × 18)流通式的SRAM(总线延迟结构)的SRAM
|
Cypress Semiconductor Corp.
|
CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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