| PART |
Description |
Maker |
| HMC478SC70 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4 GHz
|
Hittite Microwave Corporation
|
| HMC478MP86 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4.0 GHz
|
Hittite Microwave Corporation
|
| KBA2338-WCSP KBA2338 |
3W F ilterless C lass-D Audio Power Amplifie r
|
Kingbor Technology Co
|
| NTE1854M NTE1854D |
3/4 Pin 500mA Adjustable Positive Voltage Regulator 3-PFM 0 to 125
Integrated Circuit Dual Power Operational Amplifie
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| EL0093 |
High Power Limiters 2 GHz to 4 GHz
|
Micronetics, Inc.
|
| EL0094 |
High Power Limiters 4 GHz to 8 GHz
|
Micronetics, Inc.
|
| ES0314-50 |
High Power Switch 2 GHz to 18 GHz
|
Micronetics, Inc.
|
| EL0036 |
High Power Limiters 1.25 GHz to 1.35 GHz
|
Micronetics, Inc.
|
| PE6230 |
High Power 200 Watts RF Load Up To 3 GHz With N Male Input High Power Black Anodized Aluminum Heatsink
|
Pasternack Enterprises,...
|
| INA-31063 INA-31063-TR1 |
DC-2.5 GHz 3 V, High Isolation Silicon RFIC Amplifier(直流.5 GHz 3 V,高隔离硅射频集成电路放大
3V Fixed Gain. High Isolation amplifier
的DC - 2.5 GHz3伏，高隔离硅射频放大器（直流.5 GHz3伏，高隔离硅射频集成电路放大器）
0 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Agilent(Hewlett-Packard)
AGILENT TECHNOLOGIES INC
|
| SST12LP19E-NR |
2.4 GHz High-Gain, High-Efficiency Power Amplifier
|
Microchip Technology
|
