| PART |
Description |
Maker |
| EMC646SP16KS-90L EMC646SP16KS-90LF EMC646SP16KS-90 |
4Mx16 bit CellularRAM AD-MUX
4Mx16 bit CellularRAM AD-MUX
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| K3S7V2000M-TC15 K3S7V2000M-TC12 K3S7V2000M-TC10 K3 |
64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM 6400位（4Mx16 / 2Mx32）同步MASKROM
2M X 32 MASK PROM, 6 ns, PDSO86
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K3P7V1000 K3P7V1000B-YC K3P7VU1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM 6400位（8Mx8 / 4Mx16）的CMOS掩膜ROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYE18P128160AF-12.5 |
Synchronous Burst CellularRAM (1.5G) CellularRAM
|
infineon
|
| EMC326SP16AKS-45L EMC326SP16AKS-45LF EMC326SP16AKS |
2Mx16 bit CellularRAM AD-MUX
|
Emerging Memory & Logic Solutions Inc
|
| K3N7VU4000B-DC |
64M-Bit (4Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K1S6416BCC K1S6416BCC-I |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung semiconductor
|
| S71WS-P S71WS512PC0HF3SR3 S71WS512PC0HF3SR2 S71WS5 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM 1.8伏只x16同步写，突发模式CellularRAM的闪存记忆体
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| HYE18P32160AC-96 HYE18P32160AC HYE18P32160AC-125 H |
32M Synchronous Burst CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| HYE18P16161AC-L70 HYE18P16161AC-70 HYE18P16161AC-8 |
16M Asynchronous/Page CellularRAM
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 PLASTIC, VFBGA-48
|
Infineon Technologies A...
Infineon Technologies AG
|
| KMM5324000BSWG KMM5328000BSW KMM5324000BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
