PART |
Description |
Maker |
FFD08S60S FFD08S60SF085 |
8A, 600V STEALTHII Rectifier STEALTHTM II Rectifier 8A, 600V Stealth2 Rectifier
|
Fairchild Semiconductor
|
FGH50N6S2D |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
GMR30H150CTPF3T GMR30H150C GMR30H150CTA3R GMR30H15 |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIE
|
GAMMA[Gamma Microelectronics Inc.]
|
ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262 15A, 600V Stealth Diode 15A/ 600V Stealth Diode 15A, 600V Stealth⑩ Diode 15A, 600V Stealth Single Diode
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL |
8A, 600V Stealth Single Diode 8A, 600V Stealth Diode 8A, 600V Stealth⑩ Diode 8A, 600V StealthDiode
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module (DISCRETE/OPTO)
|
Toshiba Semiconductor
|
IRG4PC40K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
|
IRF[International Rectifier]
|
IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
IRG4PC30U IRG4PC30UPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
IRG4BC40W IRG4BC40W-S |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
IRG4PC50W IRG4PC50WPBF |
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|