| PART |
Description |
Maker |
| D5003MC22P0 1171-1061 D1004MC22P0 |
Sens-A-Coil Temperature Sensor
|
Spectrum Microwave, Inc.
|
| STTS3000B2DN3F |
2.3 V memory module temperature sensor
|
ST Microelectronics
|
| STTS2004B2DN3F |
2.2 V memory module temperature sensor with a 4 Kb SPD EEPROM
|
ST Microelectronics
|
| STTS2002B2DN3F |
2.3 V memory module temperature sensor with a 2 Kb SPD EEPROM
|
ST Microelectronics
|
| MCP98242T-BE_MC MCP98242T-BE_MNY MCP98242T-BE_ST M |
Memory Module Temperature Sensor w/EEPROM for SPD
|
Microchip Technology
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| KVR8X72V84-50EG |
Memory Module Specification (EDO Memory Module)
|
Electronic Theatre Controls, Inc.
|
| KMM594000-10 KMM594000-8 KMM594000 |
4M x 9 CMOS DRAM Memory Module 4米9的CMOS DRAM记忆体模
4M x 9 CMOS DRAM SIMM Memory Module
|
Samsung Semiconductor Co., Ltd.
Samsung Electronics
|
| HYM328000GD-60 HYM328000GD-50 |
8M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
|
Infineon
|
| MCM40200 MCM40200S10 MCM40200S80 MCM40200SG10 MCM4 |
2M x 40 Bit Dynamic Random Access Memory Module 2M X 40 FAST PAGE DRAM MODULE, 80 ns, SMA72
|
ZiLOG, Inc.
MOTOROLA[Motorola, Inc]
|
