PART |
Description |
Maker |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
3SK300 |
Silicon N Channel MOS FET Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
2SJ178 2SJ178-T 2SJ178-T/JD 2SJ178-T/JM |
P-channel power MOS FET P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SK1273 2SK1273-T2 2SK1273-T1 |
N-channel power MOS FET N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SJ574 |
Silicon P Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
FW306 |
N- Channel Silicon MOS FET High Speed Switching
|
Sanyo Semicon Device
|
2SK3378ENTL-E 2SK3378ENTR-E 2SK3378 |
Silicon N Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
2SK3348 |
Silicon N Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
3SK290 |
Silicon N Channel MOS FET Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
RJL6018DPK-00-T0 RJL6018DPK |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|