| PART |
Description |
Maker |
| 2SC5488A |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
Sanyo Semicon Device
|
| 2N3375 2N33752N3632_2N3733 RF25 2N3733 SD1075 2N36 |
From old datasheet system
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 2SC5545ZS-TL-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SC-61AA, MPAK-4
Silicon NPN Epitaxial VHF / UHF wide band amplifier
|
Renesas Electronics Corporation
|
| JDH2S01T |
UHF Band Mixer
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
| SST5912T1 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
|
CALOGIC LLC
|
| 2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
From old datasheet system
RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| K653 |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
PANASONIC CORP
|
| BFS481E6327 |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
SIEMENS A G
|
| J308L-2TA J308L-1TA J310L-2TA |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA
|
Vishay Intertechnology, Inc.
VISHAY SILICONIX
|
| J308LTR-E3 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA
|
Vishay Intertechnology, Inc.
|
|
