| PART |
Description |
Maker |
| 97SD3248RPQK 97SD3248 97SD3248RPQE 97SD3248RPQH 97 |
1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| 97SD3248RPQK |
1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks 32M X 48 SYNCHRONOUS DRAM, 6 ns, PQFP132
|
Maxwell Technologies, Inc
|
| 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4，银
|
http://
Maxwell Technologies, Inc
|
| MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A |
SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks
|
Micron Technology
|
| 48SD6404RPFK 48SD6404 48SD6404RPFE 48SD6404RPFH 48 |
256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| NB4N527S |
3.3V, 2.5Gb/s Dual AnyLevel to LVDS Receiver/Driver/Buffer/Translator with Internal Input Termination(带内部输入终端的3.3V, 2.5Gb/sAnyLevel到LVDS接收驱动缓冲译码
|
ON Semiconductor
|
| MT8LSDT864A MT8LSDT864AG-10B MT8LSDT864AG-10C MT8L |
8,16 MEG x 64 SDRAM DIMMs
|
MICRON[Micron Technology]
|
| AS4SD4M16DG-8_XT AS4SD4M16 AS4SD4M16DG-10_IT AS4SD |
4 Meg x 16 SDRAM Synchronous DRAM Memory
|
AUSTIN[Austin Semiconductor]
|
| AS4SD32M16DGC-75_ET AS4SD32M16DGC-75_IT AS4SD32M16 |
512Mb: 32 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| CHR CHR2520FC-10MEG-1 CHR2520FC |
10 MEG TO 100 MEG, 1 TOLERANCE, TEMPERATURE COEFFICIENT TO AS LOW AS 25 PPM/C
|
RHOPOINT[RHOPOINT COMPONENTS]
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
