| PART |
Description |
Maker |
| MB82DBS02154E-70L |
32 Mbit Mobile FCRAM 1.8 V, Burst Mode, Multiplexed Address and Data Bus
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| HYB18L256160BC-7.5 HYB18L256160BF-7.5 HYB18L256160 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
|
Qimonda AG
http://
|
| HYB18L256160BCL-7.5 HYB18L256160BFL-7.5 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
|
Qimonda AG
|
| MB82DBS04164E-70L |
64 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| HYB25L256160AC HYB25L256160AC-8 |
256-Mbit Mobile-RAM
|
Infineon Technologies A...
|
| MB84VD23581FJ-70 MB84VD23581FJ-70PBS |
64 M ( x 16) FLASH MEMORY & 64 M ( x 16) Mobile FCRAM
64 M ( x 16) FLASH MEMORY & 64 M ( x 16) Mobile FCRAM
|
SPANSION[SPANSION]
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| STN8810BDS12HPBE STN8810S12 |
STn8810 mobile multimedia application processor with 1-Gbit NAND-Flash and 512-Mbit DDR mobile RAM
|
STMicroelectronics
|
| M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| CY7C1354CV25-166AXC CY7C1356CV25-166AXC CY7C1354CV |
9-Mbit (256 K 36/512 K 18) Pipelined SRAM with NoBLArchitecture
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
