| PART |
Description |
Maker |
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg，快速开关WFET ® ，VDS=30V; VGS=±20V
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SI4800BDY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay
|
| SI4384DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7860ADP |
N-Channel Reduced, Fast Switching MOSFET
N-Channel Reduced Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4882DY |
N-Channel Reduced Qg/ Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7384DP |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4824DY |
Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| ASC-3.3S ASC-12S |
30W Ul t raminiature Modular Swi tching Power Suppl ies
|
Astrodyne Corporation
|
| 120NQ600-1 |
Reduced RFI and EMI
|
Sangdest Microelectroni...
|
| STY60NA20 6123 |
N-CHANNEL 200V - 0.030 OHM - 60A - FAST POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.030ohm - 60 A - Max247 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 200V - 0.030 - 60 A - Max247 FAST POWER MOS TRANSISTOR
N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
