| PART |
Description |
Maker |
| AGR09090EF |
90 W, 865 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| MAPLST0810-030CF MAPLST0810-030CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
|
MACOM[Tyco Electronics]
|
| MHVIC910HNR2 |
960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit Documentation
921 MHz-960 MHz SiFET RF Integrated Power Amplifier
|
MOTOROLA
|
| MA4IQP900L-1291T MA4IQP900L-129V1 |
850 MHz - 960 MHz RF/MICROWAVE AM/PHASE MODEM
I/Q Modulator/Demodulator 850-960 MHz
|
ETC[ETC]
MACOM[Tyco Electronics]
List of Unclassifed Manufacturers
|
| AGR09045E AGR09045EF AGR09045EU |
45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| PE15A5040 |
6 Watt P1dB, 800 MHz to 960 MHz, High Power Amplifier, 30 dB Gain, 50 dBm IP3, 3 dB NF, SMA
|
Pasternack Enterprises,...
|
| PSH665-FREQ-OUT1 |
VCXO, SINE OUTPUT, 465 MHz - 865 MHz
|
CONNOR WINFIELD CORP
|
| PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
| PTFA092211EL PTFA092211FL |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 ?960 MHz
|
Infineon Technologies AG
|
| PTFB091507FH |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz
|
Infineon Technologies AG
|
